Performance Comparison of Stacked Dual-Metal Gate Engineered Cylindrical Surrounding Double-Gate MOSFET

In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation channel field formation. Further, internal gate's threshold voltage ( V TH1 ) could be reduced compared external TH2 by arranging work-function Double devices. Therefore, device CSDG realized instigate effect Dual stack device. The comparison simulation shown optimized electric and surface potential profile. gradual decrease work function towards drain also improves Drain Induced Barrier Lowering (DIBL) subthreshold characteristics. physics-based analysis that operates saturation involving analogy cylindrical dual gates considered evaluate performance improvements. insights obtained from results using gate-stack structure are quite promising, which can serve as guide further reduce roll-off, suppress Hot Carrier Effects (HCEs) Short Channel (SCEs).